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K4H283238D-TCB0 Datasheet(PDF) 6 Page - Samsung semiconductor |
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K4H283238D-TCB0 Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 53 page - 6 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Table 1 : Operating frequency and DLL jitter Table 2. : Column address configurtion Table 3 : Input/Output function description Table 4 : Burst address ordering for burst length Table 5 : Bank selection for precharge by bank address bits Table 6 : Operating description when new command asserted while read with auto precharge is issued Table 7 : Operating description when new command asserted while write with auto precharge is issued Table 8 : Command truth table Table 9-1 : Functional truth table Table 9-2 : Functional truth table (contiued) Table 9-3 : Functional truth table (contiued) Table 9-4 : Functional truth table (contiued) Table 9-5 : Functional truth table (cotinued) Table 10 : Absolute maximum raings Table 11 : DC operating condtion Table 12 : DC specification Table 13 : AC operating condition Table 14 : AC timing parameters and specifications Table 15 : AC operating test conditions Table 16 : Input/Output capacitance Table 17 : Pull down and pull up current values List of tables 10 11 12 17 19 30 31 34 35 36 37 38 39 40 40 42 42 44 45 45 47 |
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