BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series

Vishay Semiconductors

formerly General Semiconductor

www.vishay.com

Document Number 88549

2

27-Jun-03

Parameter

Symbol

Value

Unit

1.25

1.10

V

0.895

Maximum reverse current per leg

200

µA

Maximum reverse recovery time per leg at

25

ns

Maximum reverse recovery time per leg at

20

ns

Maximum stored charge per leg

9nC

UG10

UGF10

UGB10

Parameter

Symbol

BYQ28E

BYQ28EF

BYQ28EB

Unit

Typical thermal resistance — junction to ambient

R

θJA

50

55

50

°C/W

per leg

— junction to case

R

θJC

4.5

6.7

4.5

°C/W

Notes:

(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset

(2) Clip mounting (on case), where leads do overlap heatsink

(3) Screw mounting with 4-40 screw, where washer diameter is

≤ 4.9 mm (0.19”)

(4) Pulse test: 300

µs pulse width, 1% duty cycle

UG10BCT

UG10CCT

UG10DCT

Parameter

Symbol

BYQ28E-100 BYQ28E-150 BYQ28E-200

Unit

Maximum repetitive peak reverse voltage

100

150

200

V

Working peak reverse voltage

100

150

200

V

Maximum DC blocking voltage

100

150

200

V

Maximum average forward rectified current Total device

10

Per leg

5

A

Peak forward surge current

8.3ms single half sine-wave superimposed

55

A

on rated load (JEDEC Method) per leg

Non-repetitive peak reverse current per leg

0.2

A

µs

Electrostatic discharge capacitor voltage,

Human body model: C = 250pF, R = 1.5k

Ω

8KV

Operating junction and storage temperature range

–40 to +150

°C

RMS Isolation voltage (BYQ28EF, UGF types)

from terminals to heatsink with t = 1 second, RH

≤ 30%

V