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HAT3019R-EL-E Datasheet(PDF) 6 Page - Renesas Technology Corp |
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HAT3019R-EL-E Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 11 page HAT3019R Preliminary R07DS1324EJ0700 Rev.7.00 Page 6 of 10 Feb 18, 2016 Main Characteristics P Channel Drain to Source Voltage VDS (V) Maximum Safe Operation Area Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics Drain Current ID (A) Drain Current ID (A) Forward Transfer Admittance vs. Drain Current –1.0 –0.6 –0.8 –0.4 –0.2 0 –4 –8 –20 –12 –16 -0.1 -1 -10 1 0.1 ID = –2 A Pulse Test Pulse Test –0.5 A 10 VGS = –4.5 V –10 V –1 A -5 -4 -3 -2 -1 0 -2 -4 -6 -8 -10 -5 -4 -3 -2 -1 0 -1 -2 -3 -4 -5 Tc = 75°C 25°C –25°C VDS = -10 V Pulse Test VGS = -2.6 V -3.0 V -10 V -3.4 V -4.5 V Pulse Test -0.01 -0.03 -0.1 -0.3 -1 -3 -10 10 1 0.1 0.01 25°C Tc = -25°C 75°C VDS = -10 V Pulse Test -10 -1 -0.1 -1 -10 -100 -0.01 -100 -0.1 -0.001 100 μs 1 ms Ta = 25°C 1 shot Pulse 10 μs Note 5 DC Operation (PW ≤ 10 s) Operation in this area is limited by RDS(on) PW = 10 ms (1shot) |
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