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HAT3019R-EL-E Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # HAT3019R-EL-E
Description  Silicon N/P Channel Power MOS FET Power Switching
Download  11 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT3019R-EL-E Datasheet(HTML) 6 Page - Renesas Technology Corp

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HAT3019R
Preliminary
R07DS1324EJ0700 Rev.7.00
Page 6 of 10
Feb 18, 2016
Main Characteristics P Channel
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Note 5 :
When using the glass epoxy board (FR4 40x40x1.6 mm)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain Current ID (A)
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
–1.0
–0.6
–0.8
–0.4
–0.2
0
–4
–8
–20
–12
–16
-0.1
-1
-10
1
0.1
ID = –2 A
Pulse Test
Pulse Test
–0.5 A
10
VGS = –4.5 V
–10 V
–1 A
-5
-4
-3
-2
-1
0
-2
-4
-6
-8
-10
-5
-4
-3
-2
-1
0
-1
-2
-3
-4
-5
Tc = 75°C
25°C
–25°C
VDS = -10 V
Pulse Test
VGS = -2.6 V
-3.0 V
-10 V
-3.4 V
-4.5 V
Pulse Test
-0.01 -0.03
-0.1
-0.3
-1
-3
-10
10
1
0.1
0.01
25°C
Tc = -25°C
75°C
VDS = -10 V
Pulse Test
-10
-1
-0.1
-1
-10
-100
-0.01
-100
-0.1
-0.001
100
μs
1 ms
Ta = 25°C
1 shot Pulse
10
μs
Note
5
DC
Operation
(PW
≤ 10
s)
Operation in
this area is
limited by RDS(on)
PW
= 10
ms
(1shot)


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