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RB751S-40 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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RB751S-40 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB751S-40 Schottky barrier Diode FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability 2 MARKING: 5 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 30 V Mean rectifying current IO 30 mA Non-repetitive Peak Forward Surge Current@t=8.3ms IFSM 200 mA Electrical Ratings @Ta=25 ℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 0.37 V IF=1mA Reverse current IR 0.5 μA VR=30V Capacitance between terminals CT 2 pF VR=1V,f=1MHZ SOD-523 Junction temperature Tj 1 25 ℃ Storage temperature Tstg -55~+150 ℃ Power dissipation PD 150 mW Thermal Resistance Junction to Ambient RθJA 667 ℃/W www.cj-elec.com 1 D,Mar,2015 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. |
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