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DMP2170U-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP2170U-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMP2170U Document number: DS38558 Rev. 1 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMP2170U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -3.1 -2.5 A Maximum Continuous Body Diode Forward Current (Note 6) IS -1.25 A Pulsed Drain Current (10 s pulse, duty cycle = 1%) IDM -13 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.78 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 163 °C/W Total Power Dissipation (Note 6) PD 1.28 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 99 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.4 -1.01 -1.25 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) - 62 92 101 90 180 250 m Ω VGS = -4.5V, ID = -3.5A VGS = -2.7V, ID = -3.0A VGS = -2.5V, ID = -2.6A Diode Forward Voltage VSD - -0.8 -1.1 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 303 - pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 46 - pF Reverse Transfer Capacitance Crss - 37 - pF Gate Resistance Rg - 16 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg - 3.6 - nC VDS = -10V, ID = -1.5A Total Gate Charge (VGS = -10V) Qg - 7.8 - nC Gate-Source Charge Qgs - 0.6 - nC Gate-Drain Charge Qgd - 1.1 - nC Turn-On Delay Time tD(ON) - 5.4 - ns VDD = -10V, VGS = -4.5V, ID = -3.5A, RG = 6Ω Turn-On Rise Time tR - 18.3 - ns Turn-Off Delay Time tD(OFF) - 16.2 - ns Turn-Off Fall Time tF - 13.6 - ns Body Diode Reverse Recovery Time tRR - 5.5 - ns IS = -2.0A, dI/dt = -100A/μs Body Diode Reverse Recovery Charge QRR - 1.23 - nC IS = -2.0A, dI/dt = -100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMP2170U-7 |
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Similar Description - DMP2170U-7 |
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