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FQB60N03L Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # FQB60N03L
Description  N-Channel Logic Level PWM Optimized Power MOSFET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQB60N03L Datasheet(HTML) 3 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
FQB60N03L Rev. B
Typical Characteristic T
C = 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
TA, AMBIENT TEMPERATURE (
oC)
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
10
20
30
40
50
60
25
50
75
100
125
150
TC, CASE TEMPERATURE (
oC)
VGS = 10V
VGS = 5V
0.1
1
10-5
10-4
10-3
10-2
10-1
100
101
0.01
2
t , RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
10-5
10-4
10-3
10-2
10-1
100
101
40
700
t, PULSE WIDTH (s)
TC = 25
oC
I = I25
150 - TC
125
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
VGS = 5V
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION


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