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B2S-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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B2S-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page B2S, B4S, B6S www.vishay.com Vishay General Semiconductor Revision: 19-Aug-13 1 Document Number: 88893 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballaster, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: TO-269AA (MBS) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Note (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads PRIMARY CHARACTERISTICS Package TO-269AA (MBS) IF(AV) 0.5 A VRRM 200 V, 400 V, 600 V IFSM 30 A IR 5 μA VF at IF = 0.5 A 1.0 V TJ max. 150 °C Diode variations Quad ~ ~ TO-269AA (MBS) ~ ~ MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B2S B4S B6S UNIT Device marking code B2 B4 B6 Maximum repetitive peak reverse voltage VRRM 200 400 600 V Maximum RMS voltage VRMS 140 280 420 V Maximum DC blocking voltage VDC 200 400 600 V Maximum average forward output rectified current on glass-epoxy PCB (fig. 1) IF(AV) 0.5 (1) A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Rating for fusing (t < 8.3 ms) I2t5.0 A2s Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUES UNIT Maximum instantaneous forward voltage per diode IF = 0.5 A VF 1.0 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C IR 5.0 μA TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF |
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