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B2S-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # B2S-E3
Description  Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

B2S-E3 Datasheet(HTML) 1 Page - Vishay Siliconix

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B2S, B4S, B6S
www.vishay.com
Vishay General Semiconductor
Revision: 19-Aug-13
1
Document Number: 88893
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Saves space on printed circuit boards
• Ideal for automated placement
• Middle surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: TO-269AA (MBS)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
PRIMARY CHARACTERISTICS
Package
TO-269AA (MBS)
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
30 A
IR
5 μA
VF at IF = 0.5 A
1.0 V
TJ max.
150 °C
Diode variations
Quad
~
~
TO-269AA (MBS)
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B2S
B4S
B6S
UNIT
Device marking code
B2
B4
B6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Maximum average forward output rectified current on
glass-epoxy PCB (fig. 1)
IF(AV)
0.5 (1)
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Rating for fusing (t < 8.3 ms)
I2t5.0
A2s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUES
UNIT
Maximum instantaneous forward
voltage per diode
IF = 0.5 A
VF
1.0
V
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 25 °C
IR
5.0
μA
TA = 125 °C
100
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
13
pF


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