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DMG2301LK-13 Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMG2301LK-13 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 7 page DMG2301LK Document number: DS38438 Rev. 2 - 2 4 of 7 www.diodes.com April 2016 © Diodes Incorporated DMG2301LK 0.05 0.1 0.15 0.2 0.25 0.3 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature V GS = -4.5V, ID = -1.0A V GS = -2.5V, ID = -1.0A 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current T J = 125 oC T J = 85 oC T J = 25 oC T J = -55 oC V GS = 0V T J = 150 oC 10 100 1000 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance f=1MHz C rss C oss C iss 0 2 4 6 8 10 0 1 2 3 4 Qg (nC) Figure 11. Gate Charge V DS = -6V, ID = -2.2A 0.01 0.1 1 10 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area P W =10s P W =10ms P W =100µs DC R DS(ON) Limited P W =1ms P W =100ms T J(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board V GS= -4.5V P W =1s 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature I D = -250μA I D = -1mA |
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