DMG3418L

Document number: DS36366 Rev. 3 - 2

2 of 5

www.diodes.com

March 2014

© Diodes Incorporated

DMG3418L

Characteristic

Symbol

Value

Unit

Drain Source Voltage

30

V

Gate-Source Voltage

±12

V

Drain Current (Note 5)

4.0

3.1

A

Drain Current (Note 6)

Pulsed

15

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.4

0.9

W

90

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

30

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1

µA

Gate-Body Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5

⎯

1.5

V

Static Drain-Source On-Resistance

⎯

⎯

⎯

25

30

50

60

70

150

m

Ω

Source-Drain Diode Forward Voltage

⎯

⎯

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

⎯

464.3

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

49.5

⎯

pF

Reverse Transfer Capacitance

⎯

43.8

⎯

pF

Total Gate Charge

⎯

5.5

⎯

nC

Gate-Source Charge

⎯

1.1

⎯

Gate-Drain Charge

⎯

1.8

⎯

Turn-On Delay Time

⎯

1.9

⎯

ns

Turn-On Rise Time

⎯

1.6

⎯

ns

Turn-Off Delay Time

⎯

10.3

⎯

ns

Turn-Off Fall Time

⎯

2.0

⎯

ns

Notes:

5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.