DMG6402LVT

Document number: DS35831 Rev. 3 - 2

2 of 6

www.diodes.com

May 2013

© Diodes Incorporated

DMG6402LVT

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Steady

State

6.0

4.8

A

t<10s

7.5

5.9

A

Steady

State

5.0

4.0

A

t<10s

6

4.8

A

Maximum Body Diode Forward Current (Note 5)

2

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

31

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.75

W

1.1

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

72

°C/W

t<10s

50

Thermal Resistance, Junction to Case (Note 5)

23

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

30





V

Zero Gate Voltage Drain Current





1

μ

A

Gate-Source Leakage





100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

1

1.5

2

V

Static Drain-Source On-Resistance



22

30

m





32

42

Forward Transfer Admittance



10



S

Diode Forward Voltage



0.75

1.0

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance



498



pF

f = 1.0MHz

Output Capacitance



52



Reverse Transfer Capacitance



45



Gate Resistance



2.4





Total Gate Charge



11.4



nC



Gate-Source Charge



1.4



Gate-Drain Charge



2



Turn-On Delay Time



3.4



nS

Turn-On Rise Time



6.2



Turn-Off Delay Time



13.9



Turn-Off Fall Time



2.8



Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.