JCS4N65SB-O-S-N-B datasheet(4/16 Pages) JSMC

Part #	JCS4N65SB-O-S-N-B

Description	High efficiency switch mode power supplies

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Manufacturer	JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]

Direct Link	http://www.hwdz.com.cn

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4 / 16 page

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JCS4N65B

版本：201506G

4/16

电特性 ELECTRICAL CHARACTERISTICS

开关特性 Switching Characteristics

延迟时间 Turn-On delay time

td(on)

VDD=300V,ID=4A,RG=25Ω

（note 4，5）

-

16

42

ns

上升时间 Turn-On rise time

tr

-

49 111

ns

延迟时间 Turn-Off delay time

td(off)

-

46 102

ns

下降时间 Turn-Off Fall time

tf

-

37

84

ns

栅极电荷总量 Total Gate Charge

Qg

VDS =480V ,

ID=4A

VGS =10V

（note 4，5）

-

13.3 19

nC

栅－源电荷 Gate-Source charge

Qgs

-

3.6

-

nC

栅－漏电荷 Gate-Drain charge

Qgd

-

4.9

-

nC

漏－源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings

正向最大连续电流

Maximum Continuous Drain

-Source Diode Forward Current

IS

-

4

A

正向最大脉冲电流

Maximum Pulsed Drain-Source

Diode Forward Current

ISM

-

16

A

正向压降

Drain-Source Diode Forward

Voltage

VSD

VGS=0V,

IS=4.0A

-

1.4

V

反向恢复时间

Reverse recovery time

trr

VGS=0V, IS=4.0A

dIF/dt=100A/μs

(note 4)

-

330

-

ns

反向恢复电荷

Reverse recovery charge

Qrr

-

2.67

-

μC

热特性 THERMAL CHARACTERISTIC

项

目

Parameter

符

号

Symbol

最大

Max

单位

Unit

JCS4N65VB

/RB

JCS4N65CB

/SB/BB

JCS4N65FB

结到管壳的热阻

Thermal Resistance, Junction to Case

Rth(j-c)

2.50

1.25

3.79

℃/W

结到环境的热阻

Thermal Resistance, Junction to Ambient

Rth(j-A)

83

62.5

℃/W

注释：

1：脉冲宽度由最高结温限制

2：L=25mH, IAS=4.0A, VDD=50V,

RG=25 Ω,起始结

温 TJ=25℃

3：ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温

TJ=25℃

4：脉冲测试：脉冲宽度

≤300μs,占空比≤2％

5：基本与工作温度无关

Notes:

1：Pulse width limited by maximum junction

temperature

2 ： L=25mH, IAS=4.0A, VDD=50V, RG=25 Ω,Starting

TJ=25℃

3 ： ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting

TJ=25℃

4：Pulse Test：

Pulse Width ≤300μs,Duty Cycle≤2％

5：Essentially independent of operating temperature

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