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JCS8N60CC-O-C-N-B Datasheet(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS8N60CC-O-C-N-B Datasheet(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
4 / 14 page R JCS8N60C 版本:201503A 4/14 电特性 ELECTRICAL CHARACTERISTICS 开关特性 Switching Characteristics 延迟时间 Turn-On delay time td(on) VDD=300V,ID=7A,RG=25Ω (note 4,5) - 11 31 ns 上升时间 Turn-On rise time tr - 35 80 ns 延迟时间 Turn-Off delay time td(off) - 46 95 ns 下降时间 Turn-Off Fall time tf - 40 92 ns 栅极电荷总量 Total Gate Charge Qg VDS =480V , ID=7A VGS =10V (note 4,5) - 32 41 nC 栅-源电荷 Gate-Source charge Qgs - 6 - nC 栅-漏电荷 Gate-Drain charge Qgd - 15 - nC 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS - - 7.0 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - - 28 A 正向压降 Drain-Source Diode Forward Voltage VSD VGS=0V, IS=7.0A - - 1.4 V 反向恢复时间 Reverse recovery time trr VGS=0V, IS=7.0A dIF/dt=100A/μs (note 4) - 345 - ns 反向恢复电荷 Reverse recovery charge Qrr - 3.2 - μC 热特性 THERMAL CHARACTERISTIC 项 目 Parameter 符 号 Symbol 最大 Max 单 位 Unit JCS8N60VC/RC/CC/SC/BC JCS8N60FC 结到管壳的热阻 Thermal Resistance, Junction to Case Rth(j-c) 1.04 3.2 ℃/W 结到环境的热阻 Thermal Resistance, Junction to Ambient Rth(j-A) 62.5 62.5 ℃/W 注释: 1:脉冲宽度由最高结温限制 2:L=14mH, IAS=7.0A, VDD=50V, RG=25 Ω,起始结 温 TJ=25℃ 3 : ISD≤6.0A,di/dt≤300A/μs,VDD≤BVDSS, 起始结温 TJ=25℃ 4:脉冲测试:脉冲宽度 ≤300μs,占空比≤2% 5:基本与工作温度无关 Notes: 1:Pulse width limited by maximum junction temperature 2 : L=14mH, IAS=7.0A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD≤6.0A,di/dt≤300A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test: Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature |
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