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JCS13N50CT Datasheet(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS13N50CT Datasheet(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
5 / 8 page R JCS13N50CT 版本:201410A 5/8 特征曲线 ELECTRICAL CHARACTERISTICS (curves) On-Region Characteristics Transfer Characteristics On-Resistance Variation vs Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Capacitance Characteristics 0 2 4 6 8 10 12 0 10203040 V DS=100V V DS=250V Q g Toltal Gate Charge [nC] V DS=400V 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25℃ 150℃ V SD Source-Drain voltage[V] 10 0 10 1 10 0 10 1 V DS Drain-Source Voltage[V] Vgs Top: 15.0V 10.0V 9.0V 8.0V 7.0V 6.5V Buttom : 5.5V 0 5 10 15 20 0.2 0.4 0.6 V GS=20V I D Drain Current [A] V GS=10V 24 6 8 10 0.1 1 10 Notes: 1.250μs pulse test 2.V DS=40V V GS Gate-Source Voltage[V] 25℃ 150℃ 10 -1 10 0 10 1 0.0 5.0x10 2 1.0x10 3 1.5x10 3 2.0x10 3 2.5x10 3 3.0x10 3 3.5x10 C iss = Cgs+Cgd (Cds=shorted) C oss = Cds+Cgd C rss = Cgd V DS Drain-Source Voltage [V] |
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