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HTA400-S Datasheet(PDF) 1 Page - LEM

Part # HTA400-S
Description  Current Transducer
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Manufacturer  LEM [LEM]
Direct Link  http://www.lem.co.jp/HQ/en
Logo LEM - LEM

HTA400-S Datasheet(HTML) 1 Page - LEM

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090430/6
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.
www.lem.com
Page 1/3
I
PN = 100 .. 1000 A
Features
Open loop transducer using Hall
effect
Panel mounting-Horizontal or
Vertical
Insulated plastic case recognized
according to UL 94-V0
Advantages
Very good linearity
Very good accuracy
Low temperature drift
Wide frequency bandwidth
Very low insertion losses
High immunity to external
interference
Current overload capability
Low power consumption
Wide dynamic range,
100 to 1000 A in one package.
Applications
AC variable speed drives and
servo motor drives
Static converters for DC motor
drives
Battery supplied applications
Uninterruptible Power Supplies
(UPS)
Switched Mode Power Supplies
(SMPS)
Power supplies for welding
applications.
Application domain
Industrial.
Current Transducer HTA 100 .. 1000-S
For the electronic measurement of currents: DC, AC, pulsed...,
with galvanic isolation between the primary circuit (high power) and
the secondary circuit (electronic circuit).
Electrical data
Type
Primary nominal
Primary current,
RoHS since
current rms
measuring range
date code
I
PN (A)
I
PM (A)
HTA 100-S
100
± 300
46179
HTA 200-S
200
± 600
46170
HTA 300-S
300
± 900
46097
HTA 400-S
400
± 1000
46100
HTA 500-S
500
± 1000
46083
HTA 600-S
600
± 1000
46222
HTA 1000-S
1000
± 1000
46118
V
OUT
Output voltage (Analog) @ ±
I
PN
± 4
V
R
L
Load resistance
T
A = 0 .. + 70°C
> 1
kΩ
T
A = - 25 .. + 85°C
> 3
kΩ
V
C
Supply voltage (± 5 %)
± 15
V
I
C
Current consumption
< 25
mA
R
IS
Isolation resistance @ 500 V
DC
> 500
MΩ
X
Accuracy 1) @
I
PN , TA = 25°C , @ ± 15 V
± 1
%
Accuracy - Dynamic performance data
ε
L
Linearity error 1) (0 .. ±
I
PN)
± 0.5
%
V
OE
Electrical offset voltage, @
I
P = 0, TA = 25°C
< ± 10
mV
V
OH
Hystersis offset voltage @
I
P = 0,
after an excursion of 3 x
I
PN
< ± 10
mV
TCV
OE Temperature coefficient of VOE
T
A = - 25 .. + 85°C
< ± 1
mV/K
TCV
OUT Temperature coefficient of VOUT
T
A = - 25 .. + 85°C
< ± 0.05
%/K
t
r
Response time to 90 % of
I
PN step
< 3
µs
di/dt di/dt accurately followed
> 50
A/µs
BW
Frequency bandwidth (- 3 dB) 2)
DC .. 50
kHz
T
A
Ambient operating temperature
- 25 .. + 85
°C
General data
T
S
Ambient storage temperature
- 25 .. + 85
°C
m
Mass
230
g
Standards
Safety
EN 50178(1994)
EMC
EN 50082-2(1992)
EN 50081-1(1992)
Deviation in output when tested to EN 61000-4-3
< 25
% of
I
PN
Notes: 1) Excludes the electrical offset
2)
Refer to derating curves in the technical file to avoid excessive core
heating at high frequency.


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