G3SBA20, G3SBA60, G3SBA80

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Vishay General Semiconductor

Revision: 27-Sep-13

2

Document Number: 88606

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes



Fig. 1 - Derating Curve Output Rectified Current

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

PARAMETER

SYMBOL

G3SBA20

G3SBA60

G3SBA80

UNIT

Typical thermal resistance

26

°C/W

5.0

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

G3SBA60-E3/45

3.404

45

20

Tube

G3SBA60-E3/51

3.404

51

250

Paper tray

0

1

2

3

4

75

50

25

0

100

125

150

Temperature (°C)

Heatsink Mounting, T

C

P.C.B. Mounting, T

A

0

20

40

60

80

100

1

100

Number of Cycles at 60 Hz

10

1.0 Cycle

0.01

0.1

1

10

100

0.4

0.8

1.2

1.6

2.0

2.4

Instantaneous Forward Voltage (V)

0.01

0.1

1

10

100

80

60

40

20

0

100

Percent of Rated Peak Reverse Voltage (%)

T

T