GBL005, GBL01, GBL02, GBL04, GBL06, GBL08, GBL10

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Vishay General Semiconductor

Revision: 16-Aug-13

3

Document Number: 88609

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1

1

10

100

10

100

1000

50 - 400 V

600 - 1000 V

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.01

0.1

1

10

100

0.1

1

10

100

t - Heating Time (s)

Case Type GBL

0.125 (3.17) x 45°

Chamfer

0.825 (20.9)

0.815 (20.7)

0.421 (10.7)

0.411 (10.4)

0.718 (18.2)

0.682 (17.3)

0.098 (2.5)

0.075 (1.9)

Lead Depth

0.022 (0.56)

0.018 (0.46)

0.210 (5.3)

0.190 (4.8)

0.040 (1.02)

0.030 (0.76)

0.140 (3.56)

0.128 (3.25)

0.022 (0.56)

0.018 (0.46)

0.050 (1.27)

0.040 (1.02)

0.098 (2.5)

0.075 (1.9)

0.095 (2.41)

0.080 (2.03)

0.080 (2.03)

0.060 (1.50)

Polarity shown on front side of case, positive lead beveled corner