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RJP1CS25DWA-80 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJP1CS25DWA-80 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page R07DS1303EJ0100 Rev.1.00 Page 1 of 3 Sep 30, 2015 Preliminary Datasheet RJP1CS25DWA / RJP1CS25DWS 1250V - 75A - IGBT Application: Inverter Features Renesas generation 7th Trench IGBT Low collector to emitter saturation voltage VCE(sat) = 1.55 V typ. (at IC = 75 A, VGE = 15 V, Tc = 25 C) Moderate speed switching Short circuit withstands time (10 s min.) Outline 1. Gate 2. Collector (The back) 3. Emitter Die: RJP1CS25DWT-80 Wafer: RJP1CS25DWA-80 2 C 2 1 G E 3 1 3 3 3 Absolute Maximum Ratings ( Tc = 25°C unless otherwise noted ) Item Symbol Ratings Unit Collector to emitter voltage VCES 1250 V Gate to emitter voltage VGES ±30 V Collector current Tc = 25°C IC 150 A Tc = 100°C IC 75 A Junction temperature Tj 175 Note1 C Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175 C. IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175 C. R07DS1303EJ0100 Rev.1.00 Sep 30, 2015 |
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