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RJP65M06DWA-80 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJP65M06DWA-80 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page R07DS1314EJ0100 Rev.1.00 Page 1 of 3 Nov. 06, 2015 Datasheet RJP65M06DWA / RJP65M06DWS 650V - 100A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.55 V typ. (at IC = 100 A, VGE = 15 V, Tc = 25C) High speed Switching Short circuit withstands time tsc = 5 s min. (at VCC 400 V , VGE = 15 V, Tj = 150 C) Outline 1. Gate 2. Collector (The back) 3. Emitter Die: RJP65M06DWT-80 Wafer: RJP65M06DWA-80 2 C 2 1 G E 3 1 3 3 3 Absolute Maximum Ratings ( Tc = 25°C unless otherwise described ) Item Symbol Ratings Unit Collector to emitter voltage VCES 650 V Gate to emitter voltage VGES ±30 V Collector current Tc = 25°C IC Note1 200 A Tc = 100°C IC Note1 100 A Junction temperature Tj 175NOTE1 C Note 1 : Please use this device in the thermal conditions where the junction temperature does not exceed 175 C. IGBT Application Note is disclosed about reliability test and application condition up to Tj=175 C. R07DS1314EJ0100 Rev.1.00 Nov. 06, 2015 |
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