RJP65S03DWA-80 datasheet(2/4 Pages) RENESAS

Part #	RJP65S03DWA-80

Description	Inverter

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJP65S03DWA / RJP65S03DWS

R07DS0820EJ0400 Rev.4.00

Page 2 of 3

Nov. 06, 2015

Electrical Characteristics (Datas below are measured values on a package configuration.)

(Tc = 25°C unless otherwise noted)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector current

ICES

—

1

A

VCE = 650 V, VGE = 0

Gate to emitter leak current

IGES

—

±1

A

VGE = ±30 V, VCE = 0

Gate to emitter cutoff voltage

VGE(off)

5.0

—

6.8

V

VCE = 10 V, IC = 0.6mA

Collector to emitter saturation voltage

VCE(sat)

—

1.50

1.80

V

IC = 30 A, VGE = 15 V Note2

Input capacitance

Cies

—

2800

—

pF

VCE = 25 V

VGE = 0

f = 1 MHz

Output capacitance

Coes

—

130

—

pF

Reveres transfer capacitance

Cres

—

90

—

pF

Total gate charge

Qg

—

140

—

nC



VGE = 15 V

VCE = 300 V

IC = 30 A

Gate to emitter charge

Qge

—

30

—

nC



Gate to collector charge

Qgc

—

75

—

nC



Switching time Note3

td(on)

—

20

—

ns

VCC = 300 V

IC = 30 A

VGE =±15 V

Rg = 10

, Tc = 150 C

Inductive load

tr

—

20

—

ns

td(off)

—

170

—

ns

tf

—

100

—

ns

Short circuit withstand time Note4

tsc

10

—

s

VCC

 360 V , VGE = 15 V

Tc = 150

C

Notes: 2. Pulse test.

3. Switching time test circuit and waveform are shown below.

4. Verified by design.

Switching Time Test Circuit

Waveform

Diode clamp

D.U.T

Rg

L

VCC

td(off)

td(on)

tf

tr

90%

10%

VGE

IC

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