R07DS0821EJ0400 Rev.4.00

Page 1 of 3

Nov. 06, 2015

Datasheet

RJP65S04DWA / RJP65S04DWS

650V - 50A - IGBT

Application: Inverter

Features

 Low collector to emitter saturation voltage

 High speed Switching

 Short circuit withstands time (10 s min.)

Outline

1. Gate

2. Collector (The back)

3. Emitter

Die: RJP65S04DWT-80

Wafer: RJP65S04DWA-80

2

C

2

1 G

E

3

1

3

3

Absolute Maximum Ratings

(Tc = 25°C unless otherwise noted)

Item

Symbol

Ratings

Unit

Collector to emitter voltage

650

V

Gate to emitter voltage

±30

V

Collector current

Tc = 25°C

100

A

Tc = 100°C

50

A

Junction temperature

Tj

C

Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175

C.

IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175

C.

R07DS0821EJ0400

Rev.4.00

Nov. 06, 2015