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NCP1117DT18T5 Datasheet(PDF) 2 Page - ON Semiconductor |
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NCP1117DT18T5 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 16 page NCP1117, NCV1117 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note 1) Vin 20 V Output Short Circuit Duration (Notes 2 and 3) − Infinite − Power Dissipation and Thermal Characteristics Case 318H (SOT−223) Power Dissipation (Note 2) Thermal Resistance, Junction−to−Ambient, Minimum Size Pad Thermal Resistance, Junction−to−Case Case 369A (DPAK) Power Dissipation (Note 2) Thermal Resistance, Junction−to−Ambient, Minimum Size Pad Thermal Resistance, Junction−to−Case PD RqJA RqJC PD RqJA RqJC Internally Limited 160 15 Internally Limited 67 6.0 W °C/W °C/W W °C/W °C/W Maximum Die Junction Temperature Range TJ −55 to 150 °C Storage Temperature Range Tstg −65 to 150 °C Operating Ambient Temperature Range NCP1117 NCV1117 TA 0 to +125 −40 to +125 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883, Method 3015. Machine Model Method 200 V. 2. Internal thermal shutdown protection limits the die temperature to approximately 175 °C. Proper heatsinking is required to prevent activation. The maximum package power dissipation is: PD + TJ(max) * TA R qJA 3. The regulator output current must not exceed 1.0 A with Vin greater than 12 V. |
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