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RJP65S06DWS-80 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJP65S06DWS-80 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 4 page RJP65S06DWA / RJP65S06DWS R07DS0823EJ0400 Rev.4.00 Page 3 of 3 Nov. 06, 2015 Die Dimension Unit: mm Illustration Part of white Part of dotted line Part of gray Note 1. Note 2. The back of the chip is processed with Au evaporation. Note 3. Recognition, target and any other patterns which are not related to Diode operation, may be changed without notice. Definition Al pattern Bonding area Final passivation 7.8 6.46 1.31 5.09 Emitter bonding pad (3) Emitter bonding pad (2) Emitter bonding pad (1) Gate bonding pad Ordering Information Orderable Part Number Shipment form RJP65S06DWA-80#W0 Unsawn wafer RJP65S06DWS-80#W0 Sawn wafer |
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