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FGL12040WD Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FGL12040WD Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGL12040WD Rev. C1 December 2014 Absolute Maximum Ratings Symbol Description FGL12040WD Unit VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V IC Collector Current @ TC = 25oC 80 A Collector Current @ TC = 100oC 40 A ILM (1) Clamped Inductive Load Current @ TC = 25oC 100 A ICM (2) Pulsed Collector Current 100 A IF Diode Continuous Forward Current @ TC = 25oC 80 A Diode Continuous Forward Current @ TC = 100oC 40 A IFM(2) Diode Maximum Forward Current 100 A SCWT (3) Short Circuit Withstand Time @ TC = 150oC 5 us PD Maximum Power Dissipation @ TC = 25oC 391 W Maximum Power Dissipation @ TC = 100oC 156 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC TC = 25°C unless otherwise noted Notes: 1. Vcc = 600 V, VGE = 15 V, IC = 100 A, RG = 23 Ω, Inductive Load 2. Repetitive rating : Pulse width limited by max, junction temperature 3. VCC = 600 V, VGE = 12 V FGL12040WD 1200 V, 40 A Field Stop Trench IGBT Features • Maximum Junction Temperature : TJ = 150oC • Positive Temperature Co-efficient for Easy Parallel Operating • Low Saturation Voltage: VCE(sat) =2.3 V @ IC = 40 A • 100% of The Parts Tested for ILM(1) • Short Circuit Ruggedness > 5 us @ 150oC • High Input Impedance • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential. Applications • Only for Welder G C E TO-264 G C E |
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