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GBI35J Datasheet(PDF) 1 Page - Diotec Semiconductor |
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GBI35J Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page  GBI35A ... GBI35M GBI35A ... GBI35M Single Phase Bridge Rectifier Einphasen-Brückengleichrichter IFAV = 35 A VF < 1.1 V Tjmax = 150°C VRRM = 50...1000 V IFSM = 320/350 A trr ~ 1500 ns Version 2016-06-28 GBI 30 x 20 x 3.6 Dimensions - Maße [mm] Typical Application 50/60 Hz Mains Rectification, Power Supplies Commercial grade 1) Typische Anwendung 50/60 Hz Netzgleichrichtung, Stromversorgungen Standardausführung 1) Features For free-standing or heatsink assembly Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheit Montage freistehend oder auf Kühlkörper Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Packed in cardboard trays 500 Verpackt in Einlagekartons Weight approx. 7 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL N/A Maximum ratings 2) Grenzwerte 2) Type Typ Max. alternating input voltage Max. Eingangswechselspannung VVRMS [V] 3) Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 4) GBI35A 35 50 GBI35B 70 100 GBI35D 140 200 GBI35G 280 400 GBI35J 420 600 GBI35K 560 800 GBI35M 700 1000 Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 70 A 5) Peak forward surge current, 50/60 Hz (10/8.3 ms) half sine-wave Stoßstrom für eine 50/60 Hz (10/8.3 ms) Sinus-Halbwelle Tj = 25°C IFSM 320/350 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Tj = 25°C i2t 512 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C Admissible torque for mounting Zulässiges Anzugsdrehmoment M3 7 ± 10% lb.in. 0.8 ± 10% Nm 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben 3 Eventual superimposed voltage peaks must not exceed VRRM Evtl. überlagerte Spannungsspitzen dürfen VRRM nicht überschreiten 4 Valid per diode – Gültig pro Diode 5 Valid, if leads are kept at ambient temperature TA = 50°C at a distance of 5 mm from case Gültig, wenn die Anschlussdrähte in 5 mm vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden 1 http://www.diotec.com/ © Diotec Semiconductor AG Pb RoHS 0.8 2.7 ±0.2 3.6 ±0.2 2.2 1.0 2x7.5 10 30 ±0.2 4.6 ±0.2 Type Typ |
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Similar Description - GBI35J |
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