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P4SMA350 Datasheet(PDF) 3 Page - Diotec Semiconductor |
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P4SMA350 Datasheet(HTML) 3 Page - Diotec Semiconductor |
3 / 3 page P4SMA220 ... P4SMA550CA 1 Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss © Diotec Semiconductor AG http://www.diotec.com/ 3 120 100 80 60 40 20 0 [%] P PP [°C] T A 150 100 50 0 I PP Peak pulse power/current vs. ambient temperature ) Impuls-Spitzenleistung/Strom vs. Umgebungstemp. ) 1 1 10/1000µs - pulse waveform 10/1000µs - Impulsform I PP P PP 100 80 60 40 20 0 0 t 1 2 3 4 [ms] [%] t P I /2 PPM P /2 PPM t = 10 µs r 10 10 1 0.1 2 P PP 0.1µs t 1µs 10µs 100µs 1ms 10ms P [kW] Non repetitive peak pulse power versus pulse width (10/1000 wave form) Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls) [pF] [V] C j V Z unidir. bidir. V = 4 V R Junction capacitance vs. breakdown voltage (typ.) Sperrschichtkapazität in Abh. v.d. Abbruchspg. (typ.) |
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