DMP25H18DLFDE

2 of 7

www.diodes.com

January 2015

© Diodes Incorporated

DMP25H18DLFDE

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-250

V

Gate-Source Voltage

±40

V

Steady

State

-0.26

-0.21

A

Pulsed Drain Current (10µs pulse, duty cycle

≦1%)

-0.8

A

Maximum Body Diode Continuous Current (Note 6)

1.2

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation

(Note 5)

0.6

W

(Note 6)

1.4

Thermal Resistance, Junction to Ambient

(Note 5)

191

°C/W

(Note 6)

86

Thermal Resistance, Junction to Case

(Note 6)

17

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-250

—

—

V

—

—

-1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.5

-1.7

-2.5

V

Static Drain-Source On-Resistance

—

10

14

13

18

Diode Forward Voltage

—

-0.8

-1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

81

—

pF

f = 1.0MHz

Output Capacitance

—

14

—

pF

Reverse Transfer Capacitance

—

4

—

pF

Gate Resistance

—

13

—

—

2.8

—

nC

Gate-Source Charge

—

0.3

—

nC

Gate-Drain Charge

—

0.6

—

nC

Turn-On Delay Time

—

7.5

—

ns

Turn-On Rise Time

—

25

—

ns

Turn-Off Delay Time

—

124

—

ns

Turn-Off Fall Time

—

95

—

ns

Reverse Recovery Time

—

85

—

ns

Reverse Recovery Charge

—

294

—

uC

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing

.