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2SK3522-01 Datasheet(PDF) 3 Page - Fuji Electric |
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2SK3522-01 Datasheet(HTML) 3 Page - Fuji Electric |
3 / 4 page 3 2SK3522-01 FUJI POWER MOSFET VGS=f(Qg):ID=21A, Tch=25°C IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=300V, VGS=10V, RG=10 Ω VGS(th)=f(Tch):VDS=VGS,ID=250µA -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch Tch [ °C] 0 204060 80 100 120 0 2 4 6 8 10 12 14 16 18 20 22 24 Vcc= 100V Vcc= 400V Qg [nC] Typical Gate Charge Characteristics Vcc= 250V 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 VSD [V] Typical Forward Characteristics of Reverse Diode 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 Typical Switching Characteristics vs. ID td(on) tr tf td(off) ID [A] 0 255075 100 125 150 0 50 100 150 200 250 300 350 400 450 500 starting Tch [ °C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=21A |
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