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DD1000 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # DD1000
Description  Fast Recovery High Voltage Rectifier Diodes
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

DD1000 Datasheet(HTML) 1 Page - Diotec Semiconductor

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DD300 ... DD1800
DD300 ... DD1800
Fast Recovery High Voltage Rectifier Diodes
Hochspannungsgleichrichter mit schnellem Sperrverzug
IFAV = 20 mA
VF
< 40 V
Tjmax = 150°C
VRRM = 3...18 kV
IFSM = 3 A
trr
< 150 ns
Version 2015-11-05
DD300...600
DD1000...1800
Dimensions - Maße [mm]
Typical Applications
High voltage rectification
at medium frequencies
Commercial grade 1)
Typische Anwendungen
Hochspannungsgleichrichtung
bei mittleren Frequenzen
Standardausführung 1)
Features
VRRM up to 18 kV
High creepage and clearance
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
VRRM bis zu 18 kV
Große Luft- und Kriechstrecken
Konform zu RoHS, REACH,
Konfliktmineralien 1
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
5000 / 13“
Gegurtet auf Rolle
Weight approx.
0.12 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = N/A
Marking:
One green ring denotes “cathode” and “High Voltage Fast Recovery Rectifier”
The type numbers are noted only on the label on the reel
Kennzeichnung:
Ein grüner Ring kennzeichnet “Kathode” und “Schnelle Hochspannungsgleichrichter”
Die Typenbezeichnungen sind nur auf dem Rollenaufkleber vermerkt
Maximum ratings 2)
Grenzwerte2)
Type
Typ
Repetitive peak reverse voltage
Period. Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
DD300
3000
3000
DD600
6000
6000
DD1000
10000
10000
DD1200
12000
12000
DD1400
14000
14000
DD1600
16000
16000
DD1800
18000
18000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 25°C
IFAV
20 mA 3)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
300 mA 3)
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 25°C
IFSM
3 A 3)
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
Ø 3
±0.1
Ø 0.6
±0.05
Ø 0.5
±0.05
Ø 2.5±0.1


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