DMN10H700S-7 datasheet(2/7 Pages) DIODES

Part #	DMN10H700S-7

Description	Low Gate Threshold Voltage

Download	7 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

Logo

2 / 7 page

DMN10H700S

Document number: DS38103 Rev. 2 - 2

2 of 7

www.diodes.com

April 2016

DMN10H700S

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

0.70

0.56

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle

≦1%)

IDM

2.5

A

Maximum Body Diode Continuous Current (Note 6)

IS

0.6

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation

(Note 5)

PD

0.4

W

(Note 6)

0.5

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RθJA

303

°C/W

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

239

Thermal Resistance, Junction to Case

(Note 6)

RθJC

88

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

100



V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS



1

µA

VDS = 100V, VGS = 0V

Gate-Source Leakage

IGSS



±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

2.0

2.7

4.0

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)



540

700

m

Ω

VGS = 10V, ID = 1.5A



550

900

VGS = 6.0V, ID = 1.0A

Diode Forward Voltage

VSD



0.9

1.1

V

VGS = 0V, IS = 1.5A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



235



pF

VDS = 50V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss



7



Reverse Transfer Capacitance

Crss



5



Gate Resistance

RG



1.9



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge

Qg



4.6



nC

VDS = 50V, VGS = 10V,

ID = 1.0A

Gate-Source Charge

Qgs



1.1



Gate-Drain Charge

Qgd



1.6



Turn-On Delay Time

tD(ON)



2.5



ns

VDS = 50V, ID = 1.0A,

VGS = 10V, RG = 6.0

Ω

Turn-On Rise Time

tR



1.1



Turn-Off Delay Time

tD(OFF)



5.4



Turn-Off Fall Time

tF



1.0



Reverse Recovery Time

tRR



22



ns

VR = 100V, IF=1.8A, di/dt=100A/µs

Reverse Recovery Charge

QRR



15



nC

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Similar Part No. - DMN10H700S-7

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	DMN10H700S-7	601Kb / 7P	100V N-CHANNEL ENHANCEMENT MODE MOSFET

More results

Similar Description - DMN10H700S-7

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	DMP25H18DLFDE	247Kb / 7P	Low Gate Threshold Voltage
	DMN3016LFDE	265Kb / 6P	Low Gate Threshold Voltage
	DMP31D0UFB4	478Kb / 7P	Low Gate Threshold Voltage
	DMN4020LFDE	290Kb / 6P	Low Gate Threshold Voltage
	DMN1150UFL3	661Kb / 7P	Low Gate Threshold Voltage
	DMN2011UFDE	344Kb / 7P	Low Gate Threshold Voltage
	DMN24H11DS	395Kb / 6P	Low Gate Threshold Voltage
	DMN2022UFDF	313Kb / 6P	Low Gate Threshold Voltage
	DMP31D0U	514Kb / 7P	Low Gate Threshold Voltage
	DMP2021UFDF	295Kb / 7P	Low Gate Threshold Voltage

More results

DMN10H700S-7 Datasheet(PDF) 2 Page - Diodes Incorporated

DMN10H700S-7 Datasheet(HTML) 2 Page - Diodes Incorporated

Similar Part No. - DMN10H700S-7

Similar Description - DMN10H700S-7

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL