DMN24H3D5L

Document number: DS37270 Rev. 3 - 2

4 of 6

www.diodes.com

January 2015

© Diodes Incorporated

DMN24H3D5L

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

J

°

1

1.3

1.6

1.9

2.2

2.5

-50

-25

0

25

50

75

100

125

150

I = 1mA

D

I = 250µA

D

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

0

0.2

0.4

0.6

0.8

1

0

0.2

0.4

0.6

0.8

1

1.2

T = 150°C

A

T = 125°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

1

10

100

1000

0

5

10

15

20

25

30

35

40

f = 1MHz

Q

(nC)

Figure 10 Gate Charge

0

2

4

6

8

10

0

1

2

3

4

5

6

7

V

= 192V

I =

A

DS

D

0.5

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

DS

T

= 150°C

T = 25°C

V

= 10V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board

R

Limited

DS(on)

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

0.001

0.01

0.1

1

10

0.1

1

10

100

1000