DMN30H14DLY datasheet(4/6 Pages) DIODES

Part #	DMN30H14DLY

Description	Low Gate Threshold Voltage

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Manufacturer	DIODES [Diodes Incorporated]

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4 / 6 page

DMN30H14DLY

Document number: DS36812 Rev. 2 - 2

4 of 6

www.diodes.com

March 2014

DMN30H14DLY

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

0

2

4

6

8

10

12

14

16

18

20

-50

-25

0

25

50

75

100

125 150

V=

V

I = 500mA

GS

D

10

V= V

I = 100mA

GS

D

5

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

0.8

0.9

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

-50

-25

0

25

50

75

100

125 150

2.0

1.0

I= 1mA

D

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

0

0.1

0.2

0.3

0.4

0.5

0.6

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

A

T = 125°C

A

T= 85°C

A

T= 25°C

A

T = -55°C

A

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

1

10

100

1000

0

5

10

15

20

25

30

35

40

Ciss

Coss

Crss

Q(nC)

g, TOTAL GATE CHARGE

Figure 11 Gate Charge

0

2

4

6

8

10

0

0.5

1

1.5

2

2.5

3

3.5

4

V

= 192V

I=

A

DS

D

0.5

V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

R

Limited

DS(on)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.001

0.01

0.1

1

10

0.1

1

10

100

1000

T

= 150°C

T = 25°C

V

= 10V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board

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