DMN1150UFB

Document number: DS36101 Rev. 3 - 2

2 of 6

www.diodes.com

February 2013

© Diodes Incorporated

DMN1150UFB

Characteristic

Symbol

Value

Units

Drain-Source Voltage

12

V

Gate-Source Voltage

±6

V

Steady

State

1.41

1.15

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

7

A

Maximum Body Diode continuous Current

1

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.5

W

0.3

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

251

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

12

—

—

V

—

—

100

nA

Gate-Source Leakage

—

—

±1

µA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.35

—

1.0

V

Static Drain-Source On-Resistance

—

—

150

mΩ

—

185

—

210

Diode Forward Voltage

—

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

106

—

pF

f = 1.0MHz

Output Capacitance

—

23

—

pF

Reverse Transfer Capacitance

—

21

—

pF

Gate resistance

—

92.4

—

Ω

—

1.5

—

nC

Gate-Source Charge

—

0.2

—

nC

Gate-Drain Charge

—

0.2

—

nC

Turn-On Delay Time

—

4.1

—

ns

Turn-On Rise Time

—

34.5

—

ns

Turn-Off Delay Time

—

57

—

ns

Turn-Off Fall Time

—

30

—

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.