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DMN2046U-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN2046U-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN2046U Document number: DS37649 Rev. 2 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN2046U Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 3.4 2.7 A Pulsed Drain Current ( Pulse width ≤10µS, Duty Cycle ≤1%) IDM 18 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 0.76 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 166 °C/W Power Dissipation (Note 6) PD 1.26 W Thermal Resistance, Junction to Ambient (Note 6) RθJA 100 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = +25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - 1.0 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS - - ±10 μA VGS = ±10V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.4 - 1.4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - - 72 110 m Ω VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A Diode Forward Voltage VSD - - 1.2 V VGS = 0V, IS = 0.94A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 292 - pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 36 - pF Reverse Transfer Capacitance Crss - 32 - pF Gate Resistance Rg - 63 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 3.8 - nC VGS = 4.5V, VDS = 10V, ID = 5.1A Gate-Source Charge Qgs - 0.5 - nC Gate-Drain Charge Qgd - 0.8 - nC Turn-On Delay Time tD(on) - 6.7 - ns VDD = 10V, VGS = 4.5V, RL = 2.4Ω, RG = 6Ω Turn-On Rise Time tr - 25.1 - ns Turn-Off Delay Time tD(off) - 69.1 - ns Turn-Off Fall Time tf - 34.1 - ns Reverse Recovery Time trr - 18.2 - ns IF = 4.1A, di/dt = 100A/μs Reverse Recovery Charge Qrr - 3.6 - nC IF = 4.1A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
Similar Part No. - DMN2046U-7 |
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Similar Description - DMN2046U-7 |
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