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DMN2046U-7 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN2046U-7
Description  Low On-Resistance
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2046U-7 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN2046U
Document number: DS37649 Rev. 2 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN2046U
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
3.4
2.7
A
Pulsed Drain Current (
Pulse width ≤10µS, Duty Cycle ≤1%)
IDM
18
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
0.76
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
166
°C/W
Power Dissipation (Note 6)
PD
1.26
W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
100
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = +25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-
-
1.0
μA
VDS = 20V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±10
μA
VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.4
-
1.4
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
-
-
72
110
m
Ω
VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
Diode Forward Voltage
VSD
-
-
1.2
V
VGS = 0V, IS = 0.94A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
-
292
-
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
36
-
pF
Reverse Transfer Capacitance
Crss
-
32
-
pF
Gate Resistance
Rg
-
63
-
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
-
3.8
-
nC
VGS = 4.5V, VDS = 10V, ID =
5.1A
Gate-Source Charge
Qgs
-
0.5
-
nC
Gate-Drain Charge
Qgd
-
0.8
-
nC
Turn-On Delay Time
tD(on)
-
6.7
-
ns
VDD = 10V, VGS = 4.5V,
RL = 2.4Ω, RG = 6Ω
Turn-On Rise Time
tr
-
25.1
-
ns
Turn-Off Delay Time
tD(off)
-
69.1
-
ns
Turn-Off Fall Time
tf
-
34.1
-
ns
Reverse Recovery Time
trr
-
18.2
-
ns
IF = 4.1A, di/dt = 100A/μs
Reverse Recovery Charge
Qrr
-
3.6
-
nC
IF = 4.1A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.


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