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CY7C1041CV33-10VC Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY7C1041CV33-10VC
Description  256K x 16 Static RAM
Download  11 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1041CV33-10VC Datasheet(HTML) 5 Page - Cypress Semiconductor

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CY7C1041CV33
Document #: 38-05134 Rev. *D
Page 5 of 11
AC Test Loads and Waveforms[10]
Switching Waveforms
Notes:
10. AC characteristics (except High-Z) for all 8-ns and 10-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the
Thevenin load shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).
11. Device is continuously selected. OE, CE, BHE and/or BHE = VIL.
12. WE is HIGH for Read cycle.
13. Address valid prior to or coincident with CE transition LOW.
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
3.3V
OUTPUT
30 pF
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
(b)
R 317
R2
351
Rise Time: 1 V/ns
Fall Time: 1 V/ns
30 pF*
OUTPUT
Z = 50
50
1.5V
(c)
(a)
3.3V
OUTPUT
5 pF
(d)
R 317
R2
351
8-, 10-ns Devices
12-, 15-, 20-ns Devices
High-Z Characteristics
Read Cycle No. 1
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
[11, 12]
Read Cycle No. 2 (OE Controlled)
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZBE
tPD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
VCC
SUPPLY
tDBE
tLZBE
tHZCE
BHE, BLE
[12, 13]
CURRENT
ICC
ISB


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