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J210 Datasheet(PDF) 1 Page - InterFET Corporation |
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J210 Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 1 page  B-56 01/99 J210, J211 N-Channel Silicon Junction Field-Effect Transistor ¥ Audio Amplifiers ¥ General Purpose Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration 1 Drain, 2 Source, 3 Gate Surface Mount SMPJ210, SMPJ211 At 25°C free air temperature: J210 J211 Process NJ26L Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG = – 1µA, VDS = ØV Gate Reverse Current IGSS – 100 – 100 pA VGS = – 15V, VDS = ØV Gate Operating Current IG – 10 – 10 pA VDS = 20V, ID = 1 mA Gate Source Cutoff Voltage VGS(OFF) – 1 – 3 – 2.5 – 4.5 V VDS = 15V, ID = 1 nA Drain Saturation Current (Pulsed) IDSS 215 7 20 mA VDS = 15V, VGS = ØV Dynamic Electrical Characteristics Common Source Forward gfs 4000 12000 6000 12000 µS VDS = 15V, VGS = Ø V f = 1 kHz Transconductance Common Source Output Conductance gos 150 200 µS VDS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 44 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Crss 11 pF VDS = 15V, VGS = ØV f = 1 MHz Transfer Capacitance Equivalent Short Circuit Input ¯eN 10 10 nV/ √Hz VDS = 15V, VGS = ØV f = 1 kHz Noise Voltage 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-56 |
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