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DMN2300U Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN2300U Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 7 page DMN2300U Datasheet number: DS35309 Rev. 2 - 2 1 of 7 www.diodes.com July 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V(BR)DSS RDS(on) ID Max (Note 5) 20V 175m Ω @ VGS = 4.5V 1.40A @ TA = 25°C 240m Ω @ VGS = 2.5V 1.20A @ TA = 25°C 360m Ω @ VGS = 1.8V 1.0A @ TA = 25°C Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Load switch Features and Benefits • On resistance <200m Ω • Low Gate Threshold Voltage • Fast Switching Speed • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free. "Green" Device (Note 2) • ESD Protected Gate 2kV • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – Matte Tin • Weight: 0.08 grams (approximate) Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN2300U-7 N2U 7 8 3000 Notes: 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D N2U = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) SOT23 Top View Top View Equivalent Circuit D G S ESD PROTECTED TO 2kV Source Gate Drain Body Diode Gate Protection Diode N2U |
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