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DMN2320UFB4 Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMN2320UFB4 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 7 page DMN2320UFB4 Document number: DS37892 Rev. 1 - 2 4 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN2320UFB4 Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A 0 0.2 0.4 0.6 0.8 1.0 1.2 I = 250µA D I = 1mA D 0 0.2 0.4 0.6 0.8 1.0 1.2 Fig. 8 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V) SD 0 0.4 0.8 1.2 1.6 2.0 T = 25°C A 1 10 100 1000 0 4 8 12 16 20 V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 9 Typical Junction Capacitance C iss C oss C rss f = 1MHz 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Q , TOTAL GATE CHARGE (nC) g Fig. 10 Gate Charge V = 10V DS I = 1.0A D 0.01 0.1 1 10 0.1 1 10 100 RDS(on) Limited T = 150°C J (m ax ) T = 25°C A V = 4.5V GS Single Pulse DUT on 1 * MRP Board V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 11 SOA, Safe Operation Area DC P = 10s W P = 1s W P = 100ms W P = 10ms W P = 1ms W P = 100µs W |
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