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DMN3016LDN-7 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN3016LDN-7
Description  Low On-Resistance
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3016LDN-7 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN3016LDN
Document number: DS37307 Rev. 2 - 2
2 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMN3016LDN
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
7.3
5.8
A
t<10s
TA = +25°C
TA = +70°C
ID
9.2
7.3
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
2.5
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
45
A
Avalanche Current (Note 7) L = 0.1mH
IAS
22
A
Avalanche Energy (Note 7) L = 0.1mH
EAS
24
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
1.1
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
119
°C/W
t<10s
75
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.6
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
78
°C/W
t<10s
49
Thermal Resistance, Junction to Case (Note 6)
RθJC
13.5
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
1.4
-
2.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
-
-
20
m
VGS = 10V, ID = 11A
-
-
24
VGS = 4.5V, ID = 9A
Diode Forward Voltage
VSD
-
0.70
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
-
1415
-
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
119
-
Reverse Transfer Capacitance
Crss
-
82
-
Gate Resistance
Rg
-
2.6
-
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Qg
-
11.3
-
nC
VDS = 15V, ID = 12A
Total Gate Charge (VGS = 10V)
Qg
-
25.1
-
Gate-Source Charge
Qgs
-
3.5
-
Gate-Drain Charge
Qgd
-
3.6
-
Turn-On Delay Time
tD(ON)
-
4.8
-
ns
VDD = 15V, VGS = 10V,
RL = 1.25Ω, RG = 3Ω
Turn-On Rise Time
tR
-
16.5
-
Turn-Off Delay Time
tD(OFF)
-
26.1
-
Turn-Off Fall Time
tF
-
5.6
-
Reverse Recovery Time
tRR
-
12.3
-
ns
IF = 12A, di/dt = 500A/μs
Reverse Recovery Charge
Qrr
-
10.4
-
nC
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.


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