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DMN3016LDN-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN3016LDN-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMN3016LDN Document number: DS37307 Rev. 2 - 2 2 of 7 www.diodes.com January 2015 © Diodes Incorporated DMN3016LDN Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 7.3 5.8 A t<10s TA = +25°C TA = +70°C ID 9.2 7.3 A Maximum Continuous Body Diode Forward Current (Note 6) IS 2.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 45 A Avalanche Current (Note 7) L = 0.1mH IAS 22 A Avalanche Energy (Note 7) L = 0.1mH EAS 24 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 1.1 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 119 °C/W t<10s 75 Total Power Dissipation (Note 6) TA = +25°C PD 1.6 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 78 °C/W t<10s 49 Thermal Resistance, Junction to Case (Note 6) RθJC 13.5 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1.4 - 2.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) - - 20 m Ω VGS = 10V, ID = 11A - - 24 VGS = 4.5V, ID = 9A Diode Forward Voltage VSD - 0.70 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 1415 - pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 119 - Reverse Transfer Capacitance Crss - 82 - Gate Resistance Rg - 2.6 - Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg - 11.3 - nC VDS = 15V, ID = 12A Total Gate Charge (VGS = 10V) Qg - 25.1 - Gate-Source Charge Qgs - 3.5 - Gate-Drain Charge Qgd - 3.6 - Turn-On Delay Time tD(ON) - 4.8 - ns VDD = 15V, VGS = 10V, RL = 1.25Ω, RG = 3Ω Turn-On Rise Time tR - 16.5 - Turn-Off Delay Time tD(OFF) - 26.1 - Turn-Off Fall Time tF - 5.6 - Reverse Recovery Time tRR - 12.3 - ns IF = 12A, di/dt = 500A/μs Reverse Recovery Charge Qrr - 10.4 - nC Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMN3016LDN-7 |
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Similar Description - DMN3016LDN-7 |
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