DMN3016LFDE datasheet(2/6 Pages) DIODES

Part #	DMN3016LFDE

Description	Low Gate Threshold Voltage

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Manufacturer	DIODES [Diodes Incorporated]

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DMN3016LFDE

Document number: DS35900 Rev. 2 - 2

2 of 6

www.diodes.com

September 2013

DMN3016LFDE

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

10

8

A

t<10s

TA = +25°C

TA = +70°C

ID

12

9

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

2.5

A

Pulsed Drain Current (10

s pulse, duty cycle = 1%)

IDM

90

A

Avalanche Current (Note 7) L = 0.1mH

IAR

22

A

Repetitive Avalanche Energy (Note 7) L = 0.1mH

EAR

24

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

PD

0.73

W

TA = +70°C

0.47

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RJA

171

°C/W

t<10s

121

Total Power Dissipation (Note 6)

TA = +25°C

PD

2.02

W

TA = +70°C

1.30

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RJA

62

°C/W

t<10s

42

Thermal Resistance, Junction to Case (Note 6)

Steady state

RJC

9.3

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

30

-

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

-

1

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

-

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

1.4

-

2.0

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS (ON)

-

8

12

mΩ

VGS = 10V, ID = 11A

-

12

16

VGS = 4.5V, ID = 9A

Forward Transfer Admittance

|Yfs|

-

32

-

S

VDS = 5V, ID = 12A

Diode Forward Voltage

VSD

-

0.70

1.0

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

-

1415

-

pF

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

-

119

-

Reverse Transfer Capacitance

Crss

-

82

-

Gate resistance

Rg

-

2.6

3.2

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg

-

11.3

-

nC

VDS = 15V, ID = 12A

Total Gate Charge (VGS = 10V)

Qg

-

25.1

-

Gate-Source Charge

Qgs

-

3.5

-

Gate-Drain Charge

Qgd

-

3.6

-

Turn-On Delay Time

tD(on)

-

4.8

-

ns

VDD = 15V, VGS = 10V,

RL = 1.25Ω, RG = 3Ω,

Turn-On Rise Time

tr

-

16.5

-

Turn-Off Delay Time

tD(off)

-

26.1

-

Turn-Off Fall Time

tf

-

5.6

-

Reverse Recovery Time

trr

-

12.3

-

ns

IF = 12A, di/dt = 500A/μs

Reverse Recovery Charge

Qrr

-

10.4

-

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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