DMP32D5LFA

Document Number: DS37119 Rev. 3 - 2

2 of 6

www.diodes.com

October 2014

© Diodes Incorporated

DMP32D5LFA

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±8

V

Steady

State

-0.3

-0.2

A

Pulsed Drain Current (Note 6)

-1.5

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

Steady State

360

mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

353

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

—

—

V

Zero Gate Voltage Drain Current

—

—

-100

nA

Gate-Source Leakage

—

—

±10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.4

—

-1.2

V

Static Drain-Source On-Resistance (Note 7)

—

0.9

1.5

Ω

1.2

2.5

2.5

7.5

Diode Forward Voltage (Note 8)

—

—

-1.0

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

40.9

—

pF

f = 1.0MHz

Output Capacitance

—

4.7

—

pF

Reverse Transfer Capacitance

—

3.6

—

pF

Total Gate Charge

—

0.7

—

nC

Gate-Source Charge

—

0.1

—

nC

Gate-Drain Charge

—

0.2

—

nC

Turn-On Delay Time

—

20

—

ns

Turn-On Rise Time

—

40

—

ns

Turn-Off Delay Time

—

144

—

ns

Turn-Off Fall Time

—

58

—

ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6.

Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.