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2N3838 Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N3838 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 2 page TECHNICAL DATA NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified Level 2N3838 2N4854 2N4854U JAN JANTX JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage VCEO 40 40 Vdc Collector-Base Voltage VCBO 60 60 Vdc Emitter-Base Voltage VEBO 5.0 5.0 Vdc Collector Current IC 600 600 mAdc One Trans Total Devic e One Trans Total Device Total Power Dissipation @ TA = +25 0C @ TC = + 25 0C(1) PT 0.25(2) 0.7(4) 0.35 1.4 0.30(3) 1.0(5) 0.60 2.0 W W Operating & Storage Junction Temp. Range TJ 200 0C Operating & Storage Junction Temp. Range Tstg -55 to +200 0C Lead to Case Voltage ±120 Vdc 1) TC rating do not apply to Surface Mount devices (2N4854U) 2) For TA > +25 0C Derate linearly 1.43 mW/0C (one transistor) 2.00 mW/0C (both transistors) 3) For TA > +25 0C Derate linearly 1.71 mW/0C (one transistor) 3.43 mW/0C (both transistors) 4) For TC > +25 0C Derate linearly 4.0 mW/0C (one transistor) 8.0 mW/0C (both transistors) 5) For TC > +250C Derate linearly 5.71 mW/0C (one transistor) 11.43 mW/0C (both transistors) TO-78* 2N4854 6 Pin Surface Mount* 2N4854U 6 Lead Flatpack* 2N3838 *See MILPRF19500/421 for package dimensions. ELECTRICAL CHARACTERISTICS (TA = 25 0C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc V(BR)CEO 40 Dc Collector-Base Cutoff Current VCB = 60 Vdc ICBO(1) 10 µAdc Collector-Base Cutoff Current VCB = 50 Vdc 2N3838 2N4854, U ICBO(2) 50 10 ηAdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 3.0 Vdc IEBO 10 10 µAdc ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42103 Page 1 of 2 |
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