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2N3635L Datasheet(PDF) 1 Page - Microsemi Corporation

Part # 2N3635L
Description  PNP SILICON AMPLIFIER TRANSISTOR
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3635L Datasheet(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices
Qualified Level
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
2N3637
2N3637L
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
2N3634*
2N3635*
2N3636*
2N3637*
Unit
Collector-Emitter Voltage
VCEO
140
175
Vdc
Collector-Base Voltage
VCBO
140
175
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
1.0
Adc
Total Power Dissipation
@ TA = +25
0C(1)
@ TC = +25
0C(2)
PT
1.0
5.0
W
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/
0C for TA > +250C
2) Derate linearly 28.6 mW/
0C for TC > +250C
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
2N3634, 2N3635
2N3636, 2N3637
V(BR)CEO
140
175
Vdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 140 Vdc
2N3634, 2N3635
ICBO
100
10
ηAdc
µAdc
Emitter-Base Cutoff Current
VEB = 3.0 Vdc
VEB = 5.0 Vdc
IEBO
50
10
ηAdc
µAdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc
ICEO
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


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