Electronic Components Datasheet Search |
|
IRF636 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
IRF636 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor IRF636 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 275 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 4.1A 0.45 Ω IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 275V; VGS= 0 250 uA VSD Diode Forward Voltage IF= 8.1A; VGS= 0 2.0 V PDF pdfFactory Pro www.fineprint.cn |
Similar Part No. - IRF636 |
|
Similar Description - IRF636 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |