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CC1150RGVR Datasheet(PDF) 8 Page - Texas Instruments

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Part # CC1150RGVR
Description  Low Power Sub-1 GHz RF Transmitter
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CC1150RGVR Datasheet(HTML) 8 Page - Texas Instruments

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CC1150
SWRS037B – JANUARY 2006 – REVISED MARCH 2015
www.ti.com
RF Transmit (continued)
Tc = 25°C, VDD = 3.0 V, if nothing else stated. All measurement results are obtained using the CC1150EM reference design
(see [1] and [2]).
PARAMETER
TYP
MAX
UNIT
CONDITION
25 MHz to 1 GHz
–36
dBm
Spurious
47 to 74 MHz,
emissions and
87.5 to 118 MHz,
–54
dBm
harmonics(1),
174 to 230 MHz,
433/868 MHz
470 to 862 MHz
Otherwise above 1 GHz
–30
dBm
< 200 µV/m at 3 m below
dBm
–49.2
960 MHz
EIRP
Spurious emissions,
315/915 MHz
< 500 µV/m at 3 m above
dBm
–41.2
960 MHz
EIRP
Whe output power is maximum
2nd, 3rd and 4th harmonic
–20
dBc
6 mV/m at 3 m (–19.6 dBm EIRP)
Harmonics 315 MHz
5th harmonic
–41.2
dBm
2nd harmonic
–20
dBc
With +10 dBm output power
Harmonics 915 MHz
3rd, 4th, and 5th harmonic
–41.2
dBm
Serial operation. Time from sampling the
TX latency
8
Bits
data on the transmitter data input pin until it
is observed on the RF output ports.
(1)
Note that close-in spurs vary with centre frequency and limits the frequencies and output power level which the CC1150 can operate at
without violating regulatory restrictions. See also Section 6.2.5 for information regarding additional filtering.
4.7
Crystal Oscillator
Tc = 25°C, VDD = 3.0 V if nothing else is stated. All measurement results obtained using the CC1150EM reference design
(see [1] and [2]).
PARAMETER
MIN
TYP
MAX
UNIT
CONDITION
Crystal frequency
26
26
27
MHz
This is the total tolerance including a) initial
tolerance, b) aging and c) temperature
dependence.
Tolerance
±40
ppm
The acceptable crystal tolerance depends on
RF frequency and channel spacing /
bandwidth
Load capacitance
10
13
20
pF
Simulated over operating conditions
ESR
100
Ω
Measured on the CC1150EM reference
Start-up time
150
µs
design (see [1] and [2]). This parameter is to
a large degree crystal dependent.
4.8
Frequency Synthesizer Characteristics
Tc = 25°C, VDD = 3.0 V if nothing else is stated. All measurement results obtained using the CC1150EM reference design
(see [1] and [2]).
PARAMETER
MIN
TYP
MAX
UNIT
CONDITION
Programmed frequency
26 MHz to 27 MHz crystals. The resolution
397
FXOSC / 2
16
412
Hz
resolution
(in Hz) is equal for all frequency bands.
Given by crystal used. Required accuracy
(including temperature and aging) depends
Synthesizer frequency tolerance
±40
ppm
on frequency band and channel bandwidth /
spacing.
@ 50 kHz offset from carrier,
RF carrier phase noise
–82
dBc/Hz
carrier at 868 MHz
@ 100 kHz offset from carrier,
RF carrier phase noise
–86
dBc/Hz
carrier at 868 MHz
8
Specifications
Copyright © 2006–2015, Texas Instruments Incorporated
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