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IRF840PBF Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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IRF840PBF Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
1 / 6 page Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 500 V ID Continuous Drain Current(@TC = 25°C) 8.8 A Continuous Drain Current(@TC = 100°C) 5.5 A IDM Drain Current Pulsed (Note 1) 35.2 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 559 mJ EAR Repetitive Avalanche Energy (Note 1) 13.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5V/ns PD Total Power Dissipation(@TC = 25 °C) 137 W Derating Factor above 25 °C 1.1 W/°C TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 °C Thermal Characteristics Symbol Parameter Value Units Min. Typ. Max. RθJC Thermal Resistance, Junction-to-Case - - 0.91 °C/W RθCS Thermal Resistance, Case to Sink - 0.5 - °C/W RθJA Thermal Resistance, Junction-to-Ambient - - 62 °C/W Features ■ RDS(on) (Max 0.85 Ω )@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested RDS(ON) = 0.85 ohm ID = 8.8A BVDSS = 500V ● ● ● ▲ ◀ ● ● ● ▲ ◀ 2. Drain 3. Source 1. Gate ® IRF840PBF Pb Free Plating Product IRF840PBF Pb 8.8A,500V Heatsink N-Channel Type Power MOSFET TO-220C 1 2 3 General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol- ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application. © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/6 Rev.05 |
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