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BQ24161 Datasheet(PDF) 8 Page - Texas Instruments |
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BQ24161 Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 52 page  bq24160, bq24160A, bq24161 bq24161B, bq24163, bq24168 SLUSAO0G – NOVEMBER 2011 – REVISED DECEMBER 2015 www.ti.com Electrical Characteristics (continued) Circuit of Figure 21, VSUPPLY = VUSB or VIN (whichever is supplying the IC), VUVLO < VSUPPLY < VOVP and VSUPPLY > VBAT+VSLP, TJ = -40°C – 125°C and TJ = 25ºC for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VDETECT Battery detection threshold During battery detection source cycle 3.3 V During battery detection sink cycle 3.0 IDETECT Battery detection current before charge done (sink Termination enabled (EN_TERM = 1) 2.5 mA current) tDETECT Battery detection time Termination enabled (EN_TERM = 1) 250 ms VIH PSEL, CD Input high logic level 1.3 V VIL PSEL, CD Input low logic level 0.4 V INPUT CURRENT LIMITING IUSBLIM = USB100 90 95 100 IUSBLIM = USB500 450 475 500 IUSBLIM = USB150 135 142.5 150 USB charge mode, VUSB = 5V, IIN_USB Input current limit threshold (USB input) mA DC Current pulled from SW IUSBLIM = USB900 800 850 900 IUSBLIM = USB800 700 750 800 IUSBLIM = 1.5A 1250 1400 1500 IN charge mode, VIN = 5V, IINLIM = 1.5A 1.35 1.5 1.65 IIN_IN Input current limit threshold (IN input) A DC Current pulled from SW IINLIM = 2.5A 2.3 2.5 2.8 VIN_DPM Input based DPM threshold range 4.2 4.76 V Charge mode, programmable via I 2C, both inputs VIN_DPM threshold accuracy –2 +2% VDRV BIAS REGULATOR VDRV Internal bias regulator voltage VSUPPLY > 5.45V 5 5.2 5.45 V IDRV DRV output current 10 mA VDO_DRV DRV Dropout voltage (VSUPPLY – VDRV) ISUPPLY = 1A, VSUPPLY = 5V, IDRV = 10mA 450 mV STATUS OUTPUT (STAT, INT) VOL Low-level output saturation voltage IO = 10mA, sink current 0.4 V IIH High-level leakage current VSTAT = VINT = 5V 1 µA PROTECTION VUVLO IC active threshold voltage VIN rising 3.6 3.8 4 V VUVLO_HYS IC active hysteresis VIN falling from above VUVLO 120 150 mV VSLP Sleep-mode entry threshold, VSUPPLY-VBAT 2.0V ≤VBAT ≤VBATREG, VIN falling 0 40 100 mV VSLP_EXIT Sleep-mode exit hysteresis 2.0V ≤VBAT ≤VBATREG 40 100 175 mV Deglitch time for supply rising above VSLP+VSLP_EXIT Rising voltage, 2mV over drive, tRISE = 100ns 30 ms After Bad Source Detection completes VIN_DPM V – 80 mV VBAD_SOURCE Bad source detection threshold During Bad Source Detection VIN_DPM V + 80 mV tDGL(BSD) Deglitch on bad source detection 32 ms USB, VUSB Rising 6.3 6.5 6.7 VOVP Input supply OVP threshold voltage IN, VIN Rising (bq24160/1/1B/3) 10.3 10.5 10.7 V IN, VIN Rising (bq24168) 6.3 6.5 6.7 VOVP(HYS) VOVP hysteresis Supply falling from VOVP 100 mV 1.025 × 1.05 × 1.075 × VBOVP Battery OVP threshold voltage VBAT threshold over VOREG to turn off charger during charge V VBATREG VBATREG VBATREG % of VBOVP hysteresis Lower limit for VBAT falling from above VBOVP 1 VBATREG tDGL(BOVP) Battery OVP deglitch BOVP fault shown in register once tDGL(BOVP) expires. 1 ms Buck converter shut down immediately when VBAT > VBATOVP VBATUVLO Battery undervoltage lockout threshold VBAT rising, 100mV hysteresis 2.5 V ILIMIT Cycle-by-cycle current limit VSYS shorted 4.1 4.9 5.6 A TSHTDWN Thermal trip 165 °C Thermal hysteresis 10 TREG Thermal regulation threshold Charge current begins to cut off 120 °C Safety timer accuracy (bq24160/1/1B/3 Only) –20% 20% PWM IIN_LIMIT = 500mA, Measured from USB to PMIDU 95 175 Internal top reverse blocking MOSFET on-resistance m Ω IIN_LIMIT = 500mA, Measured from IN to PMIDI 45 80 8 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: bq24160 bq24160A bq24161 bq24161B bq24163 bq24168 |
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