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BQ24163YFFR Datasheet(PDF) 7 Page - Texas Instruments |
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BQ24163YFFR Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 52 page  bq24160, bq24160A, bq24161 bq24161B, bq24163, bq24168 www.ti.com SLUSAO0G – NOVEMBER 2011 – REVISED DECEMBER 2015 8.4 Thermal Information bq2416xx THERMAL METRIC(1) UNIT 49 PINS (YFF) 24 PINS (RGE) θJA Junction-to-ambient thermal resistance 49.8 32.6 °C/W θJCtop Junction-to-case (top) thermal resistance 0.2 30.5 °C/W θJB Junction-to-board thermal resistance 1.1 3.3 °C/W ψJT Junction-to-top characterization parameter 1.1 0.4 °C/W ψJB Junction-to-board characterization parameter 6.6 9.3 °C/W θJCbot Junction-to-case (bottom) thermal resistance n/a 2.6 °C/W (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 8.5 Electrical Characteristics Circuit of Figure 21, VSUPPLY = VUSB or VIN (whichever is supplying the IC), VUVLO < VSUPPLY < VOVP and VSUPPLY > VBAT+VSLP, TJ = -40°C – 125°C and TJ = 25ºC for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT CURRENTS PWM switching 15 mA VUVLO < VSUPPLY < VOVP and VSUPPLY > VBAT+VSLP ISUPPLY Supply current for control (VIN or VUSB) PWM NOT switching 5 0°C < TJ < 85°C, High-Z Mode 175 μA IBATLEAK Leakage current from BAT to the Supply 0°C < TJ < 85°C, VBAT = 4.2V, VUSB = VIN = 0V 5 μA 0°C< TJ < 85°C, VBAT = 4.2V, VSUPPLY = 5V or 0V, Battery discharge current in High Impedance mode, IBAT_HIZ 55 μA (BAT, SW, SYS) SCL, SDA = 0 V or 1.8V, High-Z Mode POWER-PATH MANAGEMENT bq24160, 1, 1B, 8 3.60 3.7 3.82 Charge Enabled, VBAT < VMINSYS bq24163 3.3 3.4 3.5 VSYS(REG) System regulation voltage V VBATREG VBATREG VBATREG Battery FET turned off (Charge Disabled, TS Fault or Charging Terminated) + 1.5% + 3.0% + 4.17% bq24160, 1, 1B, 8 3.4 3.5 3.62 V Charge enabled, VBAT < VMINSYS, VMINSYS Minimum system regulation voltage Input current limit or VINDPM active bq24163 3.1 3.2 3.3 V VBAT VBSUP1 Enter supplement mode threshold VBAT > 2.5V V –30mV VBAT VBSUP2 Exit supplement mode threshold VBAT > 2.5V V –10mV ILIM(discharge) Current limit, discharge or supplement mode Current monitored in internal FET only. 7 A Deglitch time, SYS short circuit during discharge or Measured from (VBAT – VSYS) = 300mV to BAT high- tDGL(SC1) 250 μs supplement mode impedance Recovery time, SYS short circuit during discharge or tREC(SC1) 60 ms supplement mode Battery range for BGATE and supplement mode 2.5 4.5 V operation BATTERY CHARGER YFF pkg 37 57 Measured from BAT to SYS, RON(BAT-SYS) Internal battery charger MOSFET on-resistance m Ω VBAT = 4.2V RGE pkg 50 70 Charge Voltage Operating in voltage regulation, Programmable range 3.5 4.44 V VBATREG Voltage regulation accuracy –1% 1% Fast charge current range VBATSHRT ≤ VBAT < VBAT(REG) programmable range 550 2500 mA ICHARGE Fast charge current accuracy 0°C to 125°C –10% +10% bq24161, 3, 8 1.9 2.0 2.1 VBATSHRT Battery short circuit threshold 100mV Hysteresis V bq24160, 1B 2.9 3.0 3.1 IBATSHRT Battery short circuit current VBAT < VBATSHRT 50 mA Deglitch time for battery short circuit to fastcharge tDGL(BATSHRT) 32 ms transition ITERM = 50mA –35% +35% ITERM Termination charge current accuracy ITERM ≥ 100mA –15% +15% tDGL(TERM) Deglitch time for charge termination Both rising and falling, 2mV overdrive, tRISE, tFALL = 100ns 32 ms VRCH Recharge threshold voltage Below VBATREG 120 mV tDGL(RCH) Deglitch time VBAT falling below VRCH, tFALL=100ns 32 ms Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: bq24160 bq24160A bq24161 bq24161B bq24163 bq24168 |
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