BQ25890RTWT datasheet(9/69 Pages) TI1

Part #	BQ25890RTWT

Description	Adjustable Voltage USB On-the-Go Boost Mode

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Manufacturer	TI1 [Texas Instruments]

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9

bq25890, bq25892

www.ti.com

SLUSC86B – MARCH 2015 – REVISED MAY 2016

Product Folder Links: bq25890 bq25892

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Electrical Characteristics (continued)

VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT > VSLEEP, TJ = –40°C to +125°C and TJ = 25°C for typical values (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VBUS/BAT POWER UP

V(VBUS_OP)

VBUS operating range

3.9

14

V

V(VBUS_UVLOZ)

VBUS for active I2C, no battery

3.6

V

V(SLEEP)

Sleep mode falling threshold

25

65

120

mV

V(SLEEPZ)

Sleep mode rising threshold

130

250

370

mV

V(ACOV)

VBUS over-voltage rising threshold

14

14.6

V

VBUS over-voltage falling threshold

13.5

14

V

VBAT(UVLOZ)

Battery for active I2C, no VBUS

2.3

V

VBAT(DPL)

Battery depletion falling threshold

2.15

2.5

V

VBAT(DPLZ)

Battery depletion rising threshold

2.35

2.7

V

V(VBUSMIN)

Bad adapter detection threshold

3.8

V

I(BADSRC)

Bad adapter detection current source

30

mA

POWER-PATH MANAGEMENT

VSYS

Typical system regulation voltage

I(SYS) = 0 A, VBAT> VSYS(MIN),

BATFET Disabled (REG09[5]=1)

VBAT+

50 mV

V

Isys = 0 A, VBAT< VSYS(MIN),

BATFET Disabled (REG09[5]=1)

VBAT +

150 mV

V

VSYS(MIN)

Minimum DC system voltage output

VBAT< VSYS(MIN), SYS_MIN = 3.5

V (REG03[3:1]=101), ISYS= 0 A

3.50

3.65

V

VSYS(MAX)

Maximum DC system voltage output

VBAT = 4.35 V, SYS_MIN = 3.5V

(REG03[3:1]=101), ISYS= 0 A

4.40

4.42

V

RON(RBFET)

Top reverse blocking MOSFET(RBFET) on-

resistance between VBUS and PMID

TJ = –40°C to +85°C

27

38

m

Ω

TJ = –40°C to +125°C

27

44

m

Ω

RON(HSFET)

Top switching MOSFET (HSFET) on-resistance

between PMID and SW

TJ = –40°C to +85°C

27

39

m

Ω

TJ = –40°C to +125°C

27

47

m

Ω

RON(LSFET)

Bottom switching MOSFET (LSFET) on-

resistance between SW and GND

TJ = –40°C to +85°C

16

24

m

Ω

TJ = –40°C to +125°C

16

28

m

Ω

V(FWD)

BATFET forward voltage in supplement mode

BAT discharge current 10 mA

30

mV

VBAT(GD)

Battery good comparator rising threshold

VBAT rising

3.4

3.55

3.7

V

VBAT(GD_HYST)

Battery good comparator falling threshold

VBAT falling

100

mV

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