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MMBR911L Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MMBR911L Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 5 page  INCHANGE Semiconductor isc RF Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN RF Transistor MMBR911L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 2 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.05 μ A hFE DC Current Gain IC= 30mA ; VCE= 10V 30 200 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 1.0 pF fT Current-Gain—Bandwidth Product IC= 30mA ; VCE= 10V; f= 1GHz 6.0 GHz GNF Gain@ Noise Figure IC= 10mA ; VCE= 10V; f= 0.5GHz 17 dB GNF Gain@ Noise Figure IC= 10mA ; VCE= 10V; f= 1GHz 11 dB NF Noise Figure IC= 10mA ; VCE= 10V; f= 0.5GHz 2.0 dB NF Noise Figure IC= 10mA ; VCE= 10V; f= 1GHz 2.9 dB |
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