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CSD16340Q3T Datasheet(PDF) 6 Page - Texas Instruments |
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CSD16340Q3T Datasheet(HTML) 6 Page - Texas Instruments |
6 / 14 page 0.0 0.2 0.4 0.6 0.8 1.0 VSD − Source to Drain Voltage − V G008 100 1 0.01 0.0001 0.001 0.1 10 TC = 125 C ° TC = 25 C ° TC − Case Temperature − C ° 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 −75 −25 25 75 125 175 G007 ID GS =20A V =4.5V TC − Case Temperature − C ° 0.0 0.2 0.4 0.6 0.8 1.0 1.2 −75 −25 25 75 125 175 G005 ID =250 A m VGS − Gate to Source Voltage − V 0 2 4 6 8 10 12 14 16 0 3 4 7 8 9 10 G006 5 6 1 2 ID = 20A TC = 125 C ° TC = 25 C ° VDS − DraintoSourceVoltage − V 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 G004 CRSS GD =C CISS GD GS =C +C COSS GD GS =C +C f=1MHz V =0V GS Qg − GateCharge − nC 0 1 4 7 0 2 4 6 8 10 12 G003 3 2 5 6 8 ID =20A V =12.5V DS CSD16340Q3 SLPS247E – DECEMBER 2009 – REVISED AUGUST 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) Figure 4. Gate Charge Figure 5. Capacitance Figure 6. Threshold Voltage vs Temperature Figure 7. On-Resistance vs Gate Voltage Figure 8. Normalized On Resistance vs Temperature Figure 9. Typical Diode Forward Voltage 6 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated Product Folder Links: CSD16340Q3 |
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